PART |
Description |
Maker |
AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE |
Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
|
Analog Devices
|
RFLA1038SQ RFLA1038SR RFLA1038TR13 |
Variable Gain Low Noise High Linearity Amplifier 1710MHz to 1785MHz
|
RF Micro Devices
|
AD600AR-REEL AD600SQ/883B AD600AR-REEL7 |
Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: SOIC - Wide; No of Pins: 16; Temperature Range: Industrial SPECIALTY ANALOG CIRCUIT, PDSO16 Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: CerDIP; No of Pins: 16; Temperature Range: Military SPECIALTY ANALOG CIRCUIT, CDIP16
|
Analog Devices, Inc.
|
CHA229307 CHA2293-99F/00 CHA2293-99F_00 |
24-30GHz Low Noise, Variable Gain Amplifier
|
United Monolithic Semiconductors
|
AD603ARZ-REEL AD603ARZ-REEL7 |
Low Noise, 90 MHz Variable Gain Amplifier
|
Analog Devices, Inc.
|
CHA2290 |
10-18GHz Low Noise, Variable Gain Amplifier
|
United Monolithic Semiconductors
|
AD8335ACPZ AD8335 AD8335ACPZ-REEL AD8335ACPZ-REEL7 |
Quad Low Noise Low Cost Variable Gain Amplifier
|
Analog Devices
|
AD602 AD602A AD602AQ AD602AR AD602J AD602JN AD602J |
Dual, Low Noise, Wideband Variable Gain Amplifiers
|
AD[Analog Devices]
|
AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER From old datasheet system Gain Block Amplifiers The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
CHA2292-99F_00 CHA2292 CHA2292-99F/00 |
KJA 79C 79#22D PIN PLUG 17-24GHz Low Noise, Variable Gain Amplifier
|
UMS[United Monolithic Semiconductors]
|
BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|